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| TPC8114 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8114 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications * * * * * Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 3.1 m (typ.) High forward transfer admittance: |Yfs| = 47 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement-mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating -30 -30 20 -18 -72 1.9 1.0 211 -18 0.19 150 -55 to 150 Unit V V V A Pulse (Note 1) JEDEC W W mJ A mJ C C 2-6J1B Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range JEITA TOSHIBA Weight: 0.080 g (typ.) Circuit Configuration 8 7 6 5 Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2 3 4 1 2003-07-14 TPC8114 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 65.8 125 Unit C/W C/W Marking (Note 5) TPC8114 Type Lot No. Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) (a) (b) Note 3: VDD = -24 V, Tch = 25C (initial), L = 500H, RG = 25 , IAR = -18 A Note 4: Repetitive rating; pulse width limited by maximum channel temperature Note 5: * on lower left of the marking indicates Pin 1. Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) 2 2003-07-14 TPC8114 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge tf toff Qg Qgs1 Qgd Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton 0V VGS -10 V 4.7 ID = -9 A VOUT RL = 1.7 VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = -30 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 20 V VDS = -10 V, ID = -1 mA VGS = -4 V, ID = -9 A VGS = -10 V, ID = -9 A VDS = -10 V, ID = -9 A Min -30 -15 -0.8 23.5 VDD -24 V, VGS = 10 V, - ID = -18 A Typ. 5.2 3.1 47 7480 1320 1460 25 36 235 625 180 10 60 Max 10 -10 -2.0 6.8 4.5 ns nC pF Unit A A V V m S VDD -15 V - Duty < 1%, tw = 10 s = Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = -18 A, VGS = 0 V Min Typ. Max -72 1.2 Unit A V Forward voltage (diode) 3 2003-07-14 |
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